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APTC80H29T3G Datasheet(PDF) 4 Page - Microsemi Corporation |
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APTC80H29T3G Datasheet(HTML) 4 Page - Microsemi Corporation |
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4 / 6 page 
APTC80H29T3G www.microsemi.com 4 – 6 Typical performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 4V 4.5V 5V 5.5V 6V 6.5V 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) VGS=15&10V Low Voltage Output Characteristics Transfert Characteristics TJ=-55°C TJ=-55°C TJ=25°C TJ=125°C TJ=125°C 0 10 20 30 40 50 01 2345678 VGS, Gate to Source Voltage (V) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.8 0.9 1 1.1 1.2 1.3 1.4 0 5 10 15 20 25 30 ID, Drain Current (A) Normalized to VGS=10V @ 7.5A 0 2 4 6 8 10 12 14 16 25 50 75 100 125 150 TC, Case Temperature (°C) DC Drain Current vs Case Temperature |
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