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APTC80H29SCTG Datasheet(PDF) 7 Page - Microsemi Corporation |
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APTC80H29SCTG Datasheet(HTML) 7 Page - Microsemi Corporation |
7 / 7 page APTC80H29SCTG www.microsemi.com 7 – 7 Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.5 1 1.5 2 2.5 3 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 0 2 4 6 8 10 00.5 1 1.522.533.5 VF Forward Voltage (V) Reverse Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 0 50 100 150 200 400 600 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage 0 100 200 300 400 1 10 100 1000 VR Reverse Voltage “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. |
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