APTC80H29SCTG

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7 – 7

Typical SiC Diode Performance Curve

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.5

1

1.5

2

2.5

3

0.00001

0.0001

0.001

0.01

0.1

1

10

Rectangular Pulse Duration (Seconds)

Forward Characteristics

0

2

4

6

8

10

00.5

1

1.522.533.5

Reverse Characteristics

0

50

100

150

200

400

600

800 1000 1200 1400 1600

Capacitance vs.Reverse Voltage

0

100

200

300

400

1

10

100

1000

“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon

Technologies AG”.

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