APTC80H15T3G

www.microsemi.com

6 – 6

Delay Times vs Current

0

20

40

60

80

100

10

20

30

40

50

L=100µH

Rise and Fall times vs Current

0

10

20

30

40

50

10

20

30

40

50

L=100µH

Switching Energy vs Current

0

300

600

900

1200

1500

10

20

30

40

50

L=100µH

0

500

1000

1500

2000

2500

0

5

10

15

20

25

Gate Resistance (Ohms)

Switching Energy vs Gate Resistance

L=100µH

ZCS

ZVS

Hard

switching

0

50

100

150

200

250

300

350

400

6

8 10 12 14 16 18 20 22 24 26

Operating Frequency vs Drain Current

D=50%

1

10

100

1000

0.2

0.6

1

1.4

1.8

V

Source to Drain Diode Forward Voltage

“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon

Technologies AG”.

Microsemi reserves the right to change, without notice, the specifications and information contained herein

Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

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