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AMIS-42665 Datasheet(PDF) 5 Page - AMI SEMICONDUCTOR

Part No. AMIS-42665
Description  High-Speed Low Power CAN Transceiver
Download  13 Pages
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Maker  AMI [AMI SEMICONDUCTOR]
Homepage  http://www.amis.com
Logo AMI - AMI SEMICONDUCTOR

AMIS-42665 Datasheet(HTML) 5 Page - AMI SEMICONDUCTOR

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AMIS-42665 High-Speed Low Power CAN Transceiver
Data Sheet
The pins CANH and CANL are protected from automotive electrical transients (according to ISO 7637; see Figure 4). Pins TxD and
STB are pulled high internally should the input become disconnected. Pins TxD, STB and RxD will be floating, preventing reverse
supply should the VCC supply be removed.
8.0 Electrical Characteristics
8.1 Definitions
All voltages are referenced to GND (pin 2). Positive currents flow into the IC. Sinking current means the current is flowing into the pin;
sourcing current means the current is flowing out of the pin.
8.2 Absolute Maximum Ratings
Stresses above those listed in the following table may cause permanent device failure. Exposure to absolute maximum ratings for
extended periods may effect device reliability.
Table 4: Absolute Maximum Ratings
Symbol
Parameter
Conditions
Min.
Max.
Unit
VCC
Supply voltage
-0.3
+7
V
VCANH
DC voltage at pin CANH
0 < VCC < 5.25V; no time limit
-50
+50
V
VCANL
DC voltage at pin CANL
0 < VCC < 5.25V; no time limit
-50
+50
V
VSPLIT
DC voltage at pin VSPLIT
0 < VCC < 5.25V; no time limit
-50
+50
V
VTxD
DC voltage at pin TxD
-0.3
VCC + 0.3
V
VRxD
DC voltage at pin RxD
-0.3
VCC + 0.3
V
VSTB
DC voltage at pin STB
-0.3
VCC + 0.3
V
Vtran(CANH)
Transient voltage at pin CANH
Note 1
-300
+300
V
Vtran(CANL)
Transient voltage at pin CANL
Note 1
-300
+300
V
Vtran(VSPLIT)
Transient voltage at pin VSPLIT
Note 1
-300
+300
V
Vesd(CANL/CANH/
VSPLIT)
Electrostatic discharge voltage at CANH and CANL pin
Note 2
Note 4
-8
-500
+8
+500
kV
V
Vesd
Electrostatic discharge voltage at all other pins
Note 2
Note 4
-5
-500
+5
+500
kV
V
Latch-up
Static latch-up at all pins
Note 3
120
mA
Tstg
Storage temperature
-55
+150
°C
Tamb
Ambient temperature
-40
+125
°C
Tjunc
Maximum junction temperature
-40
+170
°C
Notes:
1) Applied transient waveforms in accordance with ISO 7637 part 3, test pulses 1, 2, 3a, and 3b (see Figure 4).
2) Standardized human body model electrostatic discharge (ESD) pulses in accordance to MIL883 method 3015.7.
3) Static latch-up immunity: Static latch-up protection level when tested according to EIA/JESD78.
4) Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3-1993.
8.3 Thermal Characteristics
Table 5: Thermal Characteristics
Symbol
Parameter
Conditions
Value
Unit
Rth(vj-a)
Thermal resistance from junction to ambient in SO8 package
In free air
145
K/W
Rth(vj-s)
Thermal resistance from junction to substrate of bare die
In free air
45
K/W
5
AMI Semiconductor
– Rev. 3.1, April 06
www.amis.com


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