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APTC60AM35SCTG Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTC60AM35SCTG Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 8 page  APTC60AM35SCTG www.microsemi.com 2 – 8 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 600V Tj = 25°C 50 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 600V Tj = 125°C 500 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 36A 35 m Ω VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2mA 2.1 3 3.9 V IGSS Gate – Source Leakage Current VGS = ±20 V, VDS = 0V ±150 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 14 Coss Output Capacitance 5.13 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.42 nF Qg Total gate Charge 518 Qgs Gate – Source Charge 58 Qgd Gate – Drain Charge VGS = 10V VBus = 300V ID = 72A 222 nC Td(on) Turn-on Delay Time 21 Tr Rise Time 30 Td(off) Turn-off Delay Time 283 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 400V ID = 72A RG = 2.5Ω 84 ns Eon Turn-on Switching Energy 804 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 72A, RG = 2.5Ω 1960 µJ Eon Turn-on Switching Energy 1315 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 72A, RG = 2.5Ω 2412 µJ Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 200 V Tj = 25°C 350 IRM Maximum Reverse Leakage Current VR=200V Tj = 125°C 600 µA IF DC Forward Current Tc = 85°C 60 A IF = 60A 1.1 1.15 IF = 120A 1.4 VF Diode Forward Voltage IF = 60A Tj = 125°C 0.9 V Tj = 25°C 24 trr Reverse Recovery Time Tj = 125°C 48 ns Tj = 25°C 66 Qrr Reverse Recovery Charge IF = 60A VR = 133V di/dt = 400A/µs Tj = 125°C 300 nC |
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