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APT40N60JCU3 Datasheet(PDF) 3 Page - Microsemi Corporation

Part No. APT40N60JCU3
Description  ISOTOP Buck chopper Super Junction MOSFET Power Module
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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APT40N60JCU3 Datasheet(HTML) 3 Page - Microsemi Corporation

   
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Chopper diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
IF = 30A
1.6
1.8
IF = 60A
1.9
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
1.4
V
VR = 600V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR = 600V
Tj = 125°C
500
µA
CT
Junction Capacitance
VR = 200V
44
pF
Reverse Recovery Time
IF=1A,VR=30V
di/dt =100A/µs
Tj = 25°C
23
Tj = 25°C
85
trr
Reverse Recovery Time
Tj = 125°C
160
ns
Tj = 25°C
4
IRRM
Maximum Reverse Recovery Current
Tj = 125°C
8
A
Tj = 25°C
130
Qrr
Reverse Recovery Charge
IF = 30A
VR = 400V
di/dt =200A/µs
Tj = 125°C
700
nC
trr
Reverse Recovery Time
70
ns
Qrr
Reverse Recovery Charge
1300
nC
IRRM
Maximum Reverse Recovery Current
IF = 30A
VR = 400V
di/dt =1000A/µs
Tj = 125°C
30
A
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
CoolMos
0.43
RthJC
Junction to Case Thermal Resistance
Diode
1.21
RthJA
Junction to Ambient (IGBT & Diode)
20
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ,TSTG Storage Temperature Range
-55
150
TL
Max Lead Temp for Soldering:0.063” from case for 10 sec
300
°C
Torque
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt
Package Weight
29.2
g
Typical CoolMOS Performance Curve
Maxim um Effe ctive Trans ient The rm al Im pedance , Junction to Case vs Puls e Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.00001
0.0001
0.001
0.01
0.1
1
10
Re ctangular Puls e Duration (Se conds )
Fig 1, Maximum Effective transient thermal Impe dance, Junction to case vs Pulse Duration


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