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APT35GT120JU2 Datasheet(PDF) 3 Page - Microsemi Corporation

Part No. APT35GT120JU2
Description  ISOTOP Buck chopper Trench IGBT
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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APT35GT120JU2 Datasheet(HTML) 3 Page - Microsemi Corporation

   
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APT35GT120JU2
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Chopper diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
IF = 30A
2.0
2.5
IF = 60A
2.3
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
1.8
V
VR = 1200V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR = 1200V
Tj = 125°C
500
µA
CT
Junction Capacitance
VR = 200V
32
pF
Reverse Recovery Time
IF=1A,VR=30V
di/dt =100A/µs
Tj = 25°C
31
Tj = 25°C
370
trr
Reverse Recovery Time
Tj = 125°C
500
ns
Tj = 25°C
5
IRRM
Maximum Reverse Recovery Current
Tj = 125°C
12
A
Tj = 25°C
660
Qrr
Reverse Recovery Charge
IF = 30A
VR = 800V
di/dt =200A/µs
Tj = 125°C
3450
nC
trr
Reverse Recovery Time
220
ns
Qrr
Reverse Recovery Charge
4650
nC
IRRM
Maximum Reverse Recovery Current
IF = 30A
VR = 800V
di/dt =1000A/µs
Tj = 125°C
37
A
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
IGBT
0.48
RthJC
Junction to Case Thermal Resistance
Diode
1.1
RthJA
Junction to Ambient (IGBT & Diode)
20
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ,TSTG Storage Temperature Range
-55
150
TL
Max Lead Temp for Soldering:0.063” from case for 10 sec
300
°C
Torque
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt
Package Weight
29.2
g
Typical IGBT Performance Curve
0
10
20
30
40
50
60
0
10
2030
4050
60
I
C (A)
V
CE=600V
D=50%
R
G=27Ω
T
J=125°C
Operating Frequency vs Collector Current


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