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APT34N80B2C3 Datasheet(PDF) 2 Page - Microsemi Corporation

Part No. APT34N80B2C3
Description  Super Junction MOSFET
Download  5 Pages
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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APT34N80B2C3 Datasheet(HTML) 2 Page - Microsemi Corporation

   
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DYNAMIC CHARACTERISTICS
APT34N80B2C3_LC3
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 115.92mH, RG = 25Ω, Peak IL = 3.4A
5 I
S = -34A
di/dt = 100A/µs V
R = 480V
T
J = 125°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as P
AV=EAR*f
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS = 0V, IS = -34A)
Reverse Recovery Time (I
S = -34A, dlS/dt = 100A/µs, VR = 400V)
Reverse Recovery Charge (I
S = -34A, dlS/dt = 100A/µs, VR = 400V)
Peak Diode Recovery dv/dt 5
UNIT
Amps
Volts
ns
µC
V/ns
MIN
TYP
MAX
34
102
1
1.2
855
30
6
Symbol
R
θJC
R
θJA
MIN
TYP
MAX
.30
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/dt
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 400V
I
D = 34A @ 25°C
RESISTIVESWITCHING
V
GS = 10V
V
DD = 400V
I
D = 34A @ 125°C
R
G = 2.5Ω
INDUCTIVE SWITCHING @ 25°C
V
DD = 533V, VGS = 15V
I
D = 34A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
V
DD = 533V, VGS = 15V
I
D = 34A, RG = 5Ω
MIN
TYP
MAX
4510
2050
110
180
355
22
90
25
15
70
80
69
675
580
1145
670
UNIT
pF
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05


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