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APT34N80B2C3 Datasheet(PDF) 3 Page - Microsemi Corporation

Part No. APT34N80B2C3
Description  Super Junction MOSFET
Download  5 Pages
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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APT34N80B2C3 Datasheet(HTML) 3 Page - Microsemi Corporation

   
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4.5V
5V
5.5V
4V
VGS =15 & 10V
6V
6.5V
APT34N80B2C3_LC3
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
Typical Performance Curves
0
2468
10
12
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30405060
25
50
75
100
125
150
-50
0
50
100
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
50
40
30
20
10
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100
90
80
70
60
50
40
30
20
10
0
35
30
25
20
15
10
5
0
3.0
2.5
2.0
1.5
1.0
0.5
0
I
D = 17A
V
GS = 10V
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
GS = 10V @ 17A
0.117
0.183
0.00828
0.174
Dissipated Power
(Watts)
T
J (C)
T
C (C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.


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