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APT31N80JC3 Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. APT31N80JC3
Description  Super Junction MOSFET
Download  5 Pages
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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APT31N80JC3 Datasheet(HTML) 1 Page - Microsemi Corporation

   
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MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Super Junction MOSFET
C
Power Semiconductors
O
O LMOS
• Ultra low R
DS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Q
g
• Avalanche Energy Rated
• Popular SOT-227 Package
• N-Channel Enhancement Mode
APT31N80JC3
800V 31A 0.145
SOT-227
G
S
S
D
ISOTOP®
"UL Recognized"
G
D
S
"COOLMOScomprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 500µA)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 22A)
Zero Gate Voltage Drain Current (V
DS = 800V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 800V, VGS = 0V, TJ = 150°C)
Gate-Source Leakage Current (V
GS = ±20V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 2mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
dv/dt
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V
DS = 640V, ID = 31A, TJ = 125°C)
Repetitive Avalanche Current 7
Repetitive Avalanche Energy 7
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
µA
nA
Volts
APT31N80JC3
800
31
93
±20
±30
833
6.67
-55 to 150
300
50
17
0.5
670
MIN
TYP
MAX
800
0.125
0.145
0.5
25
250
±200
2.10
3
3.9
Microsemi Website - http://www.microsemi.com
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.


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