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APT28M120B2 Datasheet(PDF) 2 Page - Microsemi Corporation |
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APT28M120B2 Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 4 page Static Characteristics TJ = 25°C unless otherwise specified Source-Drain Diode Characteristics Dynamic Characteristics TJ = 25°C unless otherwise specified 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at T J = 25°C, L = 22.09mH, RG = 2.2Ω, IAS = 14A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 C o(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 C o(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of V DS less than V(BR)DSS, use this equation: Co(er) = -4.40E-7/VDS^2 + 5.34E-8/VDS + 7.59E-11. 6 R G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. G D S Unit V V/°C Ω V mV/°C µA nA Unit A V ns µC V/ns Unit S pF nC ns Min Typ Max 1200 1.41 0.48 0.56 3 4 5 -10 100 500 ±100 Min Typ Max 28 104 1 1290 33 10 Min Typ Max 31 9670 115 715 275 140 300 50 140 50 31 170 48 Test Conditions V GS = 0V, ID = 250µA Reference to 25°C, I D = 250µA V GS = 10V, ID = 14A V GS = VDS, ID = 2.5mA V DS = 1200V T J = 25°C V GS = 0V T J = 125°C V GS = ±30V Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) I SD = 14A, TJ = 25°C, VGS = 0V I SD = 14A 3 di SD/dt = 100A/µs, TJ = 25°C I SD ≤ 14A, di/dt ≤1000A/µs, VDD = 100V, T J = 125°C Test Conditions V DS = 50V, ID = 14A V GS = 0V, VDS = 25V f = 1MHz V GS = 0V, VDS = 0V to 800V V GS = 0 to 10V, ID = 14A, V DS = 600V Resistive Switching V DD = 800V, ID = 14A R G = 2.2Ω 6 , V GG = 15V Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Peak Recovery dv/dt Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Symbol V BR(DSS) ∆V BR(DSS)/∆TJ R DS(on) V GS(th) ∆V GS(th)/∆TJ I DSS I GSS Symbol I S I SM V SD t rr Q rr dv/dt Symbol g fs C iss C rss C oss C o(cr) 4 C o(er) 5 Q g Q gs Q gd t d(on) t r t d(off) t f APT28M120B2_L |
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