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APT10M11JVRU3 Datasheet(PDF) 3 Page - Microsemi Corporation |
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APT10M11JVRU3 Datasheet(HTML) 3 Page - Microsemi Corporation |
3 / 7 page APT10M11JVRU3 www.microsemi.com 3 – 7 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit MOSFET 0.28 RthJC Junction to Case Thermal Resistance Diode 1.21 RthJA Junction to Ambient (IGBT & Diode) 20 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ,TSTG Storage Temperature Range -55 150 TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m Wt Package Weight 29.2 g Typical MOSFET Performance Curve |
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