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APT10M11JVRU2 Datasheet(PDF) 1 Page - Microsemi Corporation

Part No. APT10M11JVRU2
Description  ISOTOP Boost chopper MOSFET Power Module
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Maker  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
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APT10M11JVRU2 Datasheet(HTML) 1 Page - Microsemi Corporation

   
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APT10M11JVRU2
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ISOTOP
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
G
S
D
K
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
100
V
Tc = 25°C
142
ID
Continuous Drain Current
Tc = 80°C
106
IDM
Pulsed Drain current
576
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
11
m
PD
Maximum Power Dissipation
Tc = 25°C
450
W
IAR
Avalanche current (repetitive and non repetitive)
144
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
2500
mJ
IFAV
Maximum Average Forward Current
Duty cycle=0.5
Tc = 90°C
30
IFRMS
RMS Forward Current (Square wave, 50% duty)
47
A
VDSS = 100V
RDSon = 11mΩ max @ Tj = 25°C
ID = 142A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
Power MOS V® MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic diode
-
Avalanche energy rated
-
Very rugged
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Very rugged
Low profile
RoHS Compliant
ISOTOP® Boost chopper
MOSFET Power Module
K
D
G
S


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