©2007 Silicon Storage Technology, Inc.

S71344-00-000

2/07

1

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MPF is a trademark of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Data Sheet

FEATURES:

•

Organized as 512K x16

•

Single Voltage Read and Write Operations

– 1.65-1.95V

•

Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

•

Low Power Consumption (typical values at 5 MHz)

– Active Current: 5 mA (typical)

– Standby Current: 5 µA (typical)

•

Sector-Erase Capability

– Uniform 2 KWord sectors

•

Block-Erase Capability

– Uniform 32 KWord blocks

•

Fast Read Access Time

– 70 ns

•

Latched Address and Data

•

Fast Erase and Word-Program

– Sector-Erase Time: 36 ms (typical)

– Block-Erase Time: 36 ms (typical)

– Chip-Erase Time: 140 ms (typical)

– Word-Program Time: 28 µs (typical)

•

Automatic Write Timing

•

End-of-Write Detection

– Toggle Bit

– Data# Polling

•

CMOS I/O Compatibility

•

JEDEC Standard

– Flash EEPROM Pinouts and command sets

•

Packages Available

– 48-ball TFBGA (6mm x 8mm)

– 48-ball WFBGA (5mm x 6mm) Micro-Package

– 48-ball XFLGA (5mm x 6mm) Micro-Package

•

All non-Pb (lead-free) devices are RoHS compliant

PRODUCT DESCRIPTION

The SST39WF800B is a 512K x16 CMOS Multi-Purpose

Flash (MPF) manufactured with SST proprietary, high-per-

formance CMOS SuperFlash technology. The split-gate

cell design and thick-oxide tunneling injector attain better

reliability and manufacturability compared to alternate

approaches. The SST39WF800B writes (Program or

Erase) with a 1.65-1.95V power supply. This device con-

forms to JEDEC standard pin assignments for x16 memo-

ries.

The SST39WF800B features high-performance Word-Pro-

gramming which provides a typical Word-Program time of

28 µsec. It uses Toggle Bit or Data# Polling to detect the

completion of the Program or Erase operation. On-chip

hardware and software data protection schemes protects

against inadvertent writes. Designed, manufactured, and

tested

for

a

wide

spectrum

of

applications,

the

SST39WF800B is offered with a guaranteed typical endur-

ance of 100,000 cycles. Data retention is rated at greater

than 100 years.

The SST39WF800B is suited for applications that require

convenient and economical updating of program, configu-

ration, or data memory. It significantly improves perfor-

mance and reliability of all system applications while

lowering power consumption. It inherently uses less energy

during Erase and Program than alternative flash technolo-

gies. When programming a flash device, the total energy

consumed is a function of the applied voltage, current, and

time of application. For any given voltage range, Super-

Flash technology uses less current to program and has a

shorter erase time; therefore, the total energy consumed

during any Erase or Program operation is less than alterna-

tive flash technologies. These devices also improve flexibil-

ity while lowering the cost for program, data, and

configuration storage applications.

SuperFlash technology provides fixed Erase and Program

times independent of the number of Erase/Program cycles

that have occurred. Consequently, the system software or

hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet surface mount requirements, the SST39WF800B

is offered in a 48-ball TFBGA package and a 48-ball Micro-

Package. See Figure 3 and Figure 2 for pin assignments.

8 Mbit (x16) Multi-Purpose Flash

SST39WF800B