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SST13LP05 Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc

Part No. SST13LP05
Description  2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module
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Maker  SST [Silicon Storage Technology, Inc]
Homepage  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc

SST13LP05 Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc

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©2006 Silicon Storage Technology, Inc.
S71318-00-000
12/06
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Preliminary Specifications
FEATURES:
High Gain:
– Typically 29 dB gain across 2.4-2.5 GHz
– Typically 29-26 dB gain across 4.9-5.8 GHz
High linear output power:
– >25 dBm P1dB (Pulsed single-tone signal) across
2.4-2.5 GHz
– Meets 802.11b OFDM ACPR requirement up to
23.5 dBm across 2.4-2.5 GHz
– Meets 802.11g OFDM ACPR requirement up to
23 dBm across 2.4-2.5 GHz
– Added EVM ~4% up to 19 dBm for
54 Mbps 802.11g signal across 2.4-2.5 GHz
– >24 dBm P1dB across 4.9-5.8 GHz
– Meets 802.11a OFDM ACPR requirement up to
22.5 dBm across 4.9-5.8 GHz
– Added EVM ~4% up to 18 dBm for
54 Mbps 802.11a signal across 4.9-5.8 GHz
High power-added efficiency/Low operating
current for 802.11a/b/g applications
– ~160 mA @ POUT = 19 dBm for 802.11g
– ~235 mA @ POUT = 23.5 dBm for 802.11b
– ~270 mA @ POUT = 18 dBm for 802.11a
Built-in Ultra-low IREF power-up/down control
–IREF < 2 mA
High-speed power-up/down
– Turn on/off time (10%-90%) <100 ns
– Typical power-up/down delay with driver delay
included <200 ns
High temperature stability
– ~1 dB gain/power variation between 0°C to +85°C
across 2.4-2.5 GHz
– ~3/1 dB gain/max linear power variation between
0°C to +85°C across 4.9-5.8 GHz
– ±0.5 dB detector variation between 0°C to +85°C
Low shut-down current (< 2 µA)
20 dB dynamic range on-chip power detection
Built-in input/output matching
Packages available
– 16-contact LGA package (4mm x 4mm)
All non-Pb (lead-free) devices are ROHS compliant.
APPLICATIONS:
WLAN (IEEE 802.11a/g/b)
Japanese WLAN
HyperLAN2
Multimedia
•Home RF
Cordless phones
PRODUCT DESCRIPTION
The SST13LP05 is a fully matched, dual-band power
amplifier module (PAM) based on the highly-reliable InGaP/
GaAs HBT technology. This PAM provides excellent RF
performance, temperature-stable power detectors, and
low-current
analog
on/off
control
interfaces.
The
SST13LP05 provides stable RF and power detector perfor-
mance over a large VCC power supply variation, with an
ultra-low shut-down current.
With a near-zero Rest of Bill of Materials (RBOM), the
SST13LP05 is designed for 802.11a/b/g applications cov-
ering frequency bands 2.4-2.5 GHz and 4.9-5.8 GHz for
U.S., European, and Japanese markets.
The SST13LP05 has excellent linearity, typically 4% added
Error Vector Magnitude (EVM) at 19 dBm output power.
This output power is essential for 54 Mbps 802.11g opera-
tion while meeting 802.11g spectrum mask at 23 dBm and
802.11b spectrum mask at 23.5 dBm. For 802.11a opera-
tion, the SST13LP05 typically demonstrates <4% added
EVM at 18 dBm output power while meeting 802.11a spec-
trum mask at 22.5 dBm.
The SST13LP05 also has wide-range (>20 dB), tempera-
ture-stable (±0.5 dB across 0°C to +85°C), directionally-
coupled, power detectors which provide a reliable and cost-
effective solution to board-level power control. The device’s
analog on/off control can be driven by an analog or digital
control signal from either a transceiver or baseband chip.
These features, coupled with low operating current, make
the SST13LP05 ideal for the final stage power amplifica-
tion in both battery-powered 802.11a/b/g WLAN trans-
mitters and access point applications.
The SST13LP05 is offered in a 16-contact LGA package.
See Figure 2 for pin assignments and Table 1 for pin
descriptions.
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module
SST13LP05
SST13LP052.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier


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