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SST27SF020-70-3C-PH Datasheet(PDF) 8 Page - Silicon Storage Technology, Inc |
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SST27SF020-70-3C-PH Datasheet(HTML) 8 Page - Silicon Storage Technology, Inc |
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8 / 23 page  8 Data Sheet 512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020 ©2005 Silicon Storage Technology, Inc. S71152-11-000 9/05 TABLE 6: PROGRAM/ERASE DC OPERATING CHARACTERISTICS FOR SST27SF512 VDD=4.5-5.5V, VPP=VPPH (TA=25°C±5°C) Symbol Parameter Limits Test Conditions Min Max Units IDD VDD Erase or Program Current 30 mA CE#=VIL, OE#/VPP=11.4-12V, VDD=VDD Max IPP VPP Erase or Program Current 3 mA CE#=VIL, OE#/VPP=11.4-12V, VDD=VDD Max ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max ILO Output Leakage Current 10 µA VOUT=GND to VDD, VDD=VDD Max VH Supervoltage for A9 11.4 12 V CE#=OE#/VPP=VIL, IH Supervoltage Current for A9 200 µA CE#=OE#/VPP=VIL, A9=VH Max VPPH High Voltage for OE#/VPP Pin 11.4 12 V T6.5 1152 TABLE 7: PROGRAM/ERASE DC OPERATING CHARACTERISTICS FOR SST27SF010/020 VDD=4.5-5.5V, VPP=VPPH (TA=25°C±5°C) Symbol Parameter Limits Test Conditions Min Max Units IDD VDD Erase or Program Current 30 mA CE#=PGM#=VIL, OE#=VIH, VPP=11.4-12V, VDD=VDD Max IPP VPP Erase or Program Current 3 mA CE#=PGM#=VIL, OE#=VIH, VPP=11.4-12V, VDD=VDD Max ILI Input Leakage Current 1 µA VIN =GND to VDD, VDD=VDD Max ILO Output Leakage Current 10 µA VOUT =GND to VDD, VDD=VDD Max VH Supervoltage for A9 11.4 12 V CE#=OE#=VIL, IH Supervoltage Current for A9 200 µA CE#=OE#=VIL, A9=VH Max VPPH High Voltage for VPP Pin 11.4 12 V T7.5 1152 TABLE 8: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter Minimum Units TPU-READ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Power-up to Read Operation 100 µs TPU-WRITE1 Power-up to Write Operation 100 µs T8.1 1152 TABLE 9: CAPACITANCE (TA = 25°C, f=1 Mhz, other pins open) Parameter Description Test Condition Maximum CI/O1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. I/O Pin Capacitance VI/O = 0V 12 pF CIN1 Input Capacitance VIN = 0V 6 pF T9.0 1152 TABLE 10: RELIABILITY CHARACTERISTICS Symbol Parameter Minimum Specification Units Test Method NEND1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Endurance 1000 Cycles JEDEC Standard A117 TDR1 Data Retention 100 Years JEDEC Standard A103 T10.3 1152 |
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