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TDA1015 Datasheet(PDF) 5 Page - NXP Semiconductors

Part No. TDA1015
Description  1 to 4 W audio power amplifier
Download  13 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TDA1015 Datasheet(HTML) 5 Page - NXP Semiconductors

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November 1982
5
Philips Semiconductors
Product specification
1 to 4 W audio power amplifier
TDA1015
D.C. CHARACTERISTICS
A.C. CHARACTERISTICS
Tamb = 25 °C; VP = 12 V; RL = 4 Ω; f = 1 kHz unless otherwise specified; see also Fig.3.
Supply voltage range
VP
3,6 to 18
V
Repetitive peak output current
IORM
<2
A
Total quiescent current at VP = 12 V
Itot
typ.
14
mA
<25
mA
A.F. output power at dtot = 10% (note 1)
with bootstrap:
VP = 12 V; RL = 4 Ω
Po
typ.
4,2
W
VP = 9 V; RL = 4 Ω
Po
typ.
2,3
W
VP = 6 V; RL = 4 Ω
Po
typ.
1,0
W
without bootstrap:
VP = 12 V; RL = 4 Ω
Po
typ.
3,0
W
Voltage gain:
preamplifier (note 2)
Gv1
typ.
23
dB
power amplifier
Gv2
typ.
29
dB
total amplifier
Gv tot
typ.
52
dB
49 to 55
dB
Total harmonic distortion at Po = 1,5 W
dtot
typ.
0,3
%
<
1,0
%
Frequency response;
−3 dB (note 3)
B
60 Hz to 15
kHz
Input impedance:
preamplifier (note 4)
|Zi1|
>
100
k
typ.
200
k
power amplifier
|Zi2|
typ.
20
k
Output impedance preamplifier
|Zo1|
typ.
1
k
Output voltage preamplifier (r.m.s. value); dtot < 1% (note 2)
Vo(rms)
typ.
0,8
V
Noise output voltage (r.m.s. value; note 5)
RS = 0 Ω
Vn(rms)
typ.
0,2
mV
RS = 10 kΩ
Vn(rms)
typ.
0,5
mV
Noise output voltage at f = 500 kHz (r.m.s. value); B = 5 kHz; RS = 0 Ω Vn(rms)
typ.
8
µV
Ripple rejection (note 6); f = 100 Hz
RR
typ.
38
dB


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