©2006 Silicon Storage Technology, Inc.

S71151-07-000

8/06

1

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MTP is a trademark of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Data Sheet

512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8)

Many-Time Programmable Flash

SST37VF512 / SST37VF010 / SST37VF020 / SST37VF040

FEATURES:

•

Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8

•

2.7-3.6V Read Operation

•

Superior Reliability

– Endurance: At least 1000 Cycles

– Greater than 100 years Data Retention

•

Low Power Consumption:

– Active Current: 10 mA (typical)

– Standby Current: 2 µA (typical)

•

Fast Read Access Time:

– 70 ns

•

Latched Address and Data

•

Fast Byte-Program Operation:

– Byte-Program Time: 15 µs (typical)

– Chip Program Time:

1 seconds (typical) for SST37VF512

2 seconds (typical) for SST37VF010

4 seconds (typical) for SST37VF020

8 seconds (typical) for SST37VF040

•

Electrical Erase Using Programmer

– Does not require UV source

– Chip-Erase Time: 100 ms (typical)

•

CMOS I/O Compatibility

•

JEDEC Standard Byte-wide Flash

EEPROM Pinouts

•

Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

– 32-pin PDIP

– Non-Pb (lead-free) packages available

PRODUCT DESCRIPTION

The SST37VF512/010/020/040 devices are 64K x8 / 128K

x8 / 256K x8 / 512K x8 CMOS, Many-Time Programmable

(MTP), low cost flash, manufactured with SST’s proprietary,

high performance CMOS SuperFlash technology. The

split-gate cell design and thick-oxide tunneling injector

attain better reliability and manufacturability compared with

alternate approaches. The SST37VF512/010/020/040 can

be electrically erased and programmed at least 1000 times

using an external programmer, e.g., to change the contents

of devices in inventory. The SST37VF512/010/020/040

have to be erased prior to programming. These devices

conform to JEDEC standard pinouts for byte-wide flash

memories.

Featuring

high

performance

Byte-Program,

the

SST37VF512/010/020/040 provide a typical Byte-Pro-

gram time of 15 µs. Designed, manufactured, and tested

for a wide spectrum of applications, these devices are

offered with an endurance of at least 1000 cycles. Data

retention is rated at greater than 100 years.

The SST37VF512/010/020/040 are suited for applications

that require infrequent writes and low power nonvolatile

storage. These devices will improve flexibility, efficiency,

and performance while matching the low cost in nonvolatile

applications that currently use UV-EPROMs, OTPs, and

mask ROMs.

To meet surface mount and conventional through hole

requirements, the SST37VF512/010/020/040 are offered in

32-lead PLCC, 32-lead TSOP, and 32-pin PDIP packages.

See Figures 2, 3, and 4 for pin assignments.

Device Operation

The SST37VF512/010/020/040 devices are nonvolatile

memory solutions that can be used instead of standard

flash devices if in-system programmability is not required. It

is functionally (Read) and pin compatible with industry

standard flash products.The device supports electrical

Erase operation via an external programmer.

Read

The Read operation of the SST37VF512/010/020/040 is

controlled by CE# and OE#. Both CE# and OE# have to be

low for the system to obtain data from the outputs. Once

the address is stable, the address access time is equal to

output after a delay of TOE from the falling edge of OE#,

assuming the CE# pin has been low and the addresses

high, the chip is deselected and a standby current of only 2

µA (typical) is consumed. OE# is the output control and is

used to gate data from the output pins. The data bus is in

to Figure 5 for the timing diagram.

SST37VF512 / 010 / 020 / 0402.7V-Read 512Kb / 1Mb / 2Mb / 4Mb (x8) MTP flash memories