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SST39VF080-70-4I-EIE Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST39VF080-70-4I-EIE Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc |
1 / 25 page EOL Data Sheet ©2007 Silicon Storage Technology, Inc. S71146-07-EOL 6/07 1 The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 8 Mbit (x8) Multi-Purpose Flash SST39LF080 / SST39VF080 FEATURES: • Organized as 1M x8 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF080 – 2.7-3.6V for SST39VF080 • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption (typical values at 14 MHz) – Active Current: 12 mA (typical) – Standby Current: 4 µA (typical) – Auto Low Power Mode: 4 µA (typical) • Sector-Erase Capability – Uniform 4 KByte sectors • Block-Erase Capability – Uniform 64 KByte blocks • Fast Read Access Time: – 55 ns for SST39LF080 – 70 and 90 ns for SST39VF080 • Latched Address and Data • Fast Erase and Byte-Program: – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time: 15 seconds (typical) for SST39LF/VF080 • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bit – Data# Polling • CMOS I/O Compatibility • JEDEC Standard – Flash EEPROM Pinouts and command sets • Packages Available – 40-lead TSOP (10mm x 20mm) – 48-ball TFBGA (6mm x 8mm) PRODUCT DESCRIPTION The SST39LF/VF080 devices are 1M x8 CMOS Multi-Pur- pose Flash (MPF) manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF080 write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF080 write (Program or Erase) with a 2.7-3.6V power supply. They conform to JEDEC standard pinouts for x8 memories. Featuring high performance Byte-Program, the SST39LF/ VF080 devices provide a typical Byte-Program time of 14 µsec. The devices use Toggle Bit or Data# Polling to indi- cate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufac- tured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 10,000 cycles. Data retention is rated at greater than 100 years. The SST39LF/VF080 devices are suited for applications that require convenient and economical updating of pro- gram, configuration, or data memory. For all system appli- cations, they significantly improve performance and reliability, while lowering power consumption. They inher- ently use less energy during Erase and Program than alter- native flash technologies. The total energy consumed is a function of the applied voltage, current, and time of applica- tion. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technolo- gies. They also improve flexibility while lowering the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Pro- gram times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Pro- gram cycles. To meet high density, surface mount requirements, the SST39LF/VF080 are offered in 40-lead TSOP and 48- ball TFBGA packages. See Figures 1 and 2 for pin assignments. SST39LF/VF0803.0 & 2.7V 8Mb (x8) MPF memories |
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