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LT1001MH Datasheet(PDF) 7 Page - Linear Technology |
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LT1001MH Datasheet(HTML) 7 Page - Linear Technology |
7 / 16 page 7 LT1001 1001fb 0.1Hz to 10Hz Noise Test Circuit Offset Voltage Adjustment The input offset voltage of the LT1001, and its drift with temperature, are permanently trimmed at wafer test to a low level. However, if further adjustment of Vos is neces- sary, nulling with a 10k or 20k potentiometer will not degrade drift with temperature. Trimming to a value other than zero creates a drift of (Vos/300) µV/°C, e.g., if Vos is LT1001 – + LT1001 100k Ω 2k Ω 100k 4.3k 110k SCOPE × 1 RIN = 1MΩ 0.1 µF 4.7 µF 24.3k 10 Ω 1001 F03 0.1 µF 22 µF VOLTAGE GAIN = 50,000 2.2 µF DEVICE UNDER TEST (PEAK-TO-PEAK NOISE MEASURED IN 10 SEC INTERVAL) Improved Sensitivity Adjustment –15V LT1001 +15V 2 3 7 6 OUTPUT INPUT 1001 F02 4 8 7.5k 1k 7.5k 1 1001 F04 – + + +– + 2.2 µF TANTALUM INPUT 1k 30k 3.9k 30k 390 Ω 1.2k 0.5 Ω 0.5 Ω 470 Ω 300 Ω 1.8k 3.9k 300 Ω *ADJUST FOR BEST SQUARE WAVE AT OUTPUT FULL POWER BANDWIDTH 8MHz 200 Ω* 200 Ω* 22 Ω 33 Ω 2N3866 2N5160 2N5160 2N3904 2N4440 2N3866 +15V 2N4440 OUTPUT 2N3904 2N3906 1N914 1N914 6 3 15pF 10k RIN 1k 2 –15V LT1001 0.01 µF 22 µF TANTALUM 22 µF TANTALUM 0.1 µF 0.1 µF –15V 200pF 0.001 µF 0.01 µF 200pF 2N5486 15-60pF TUSONIX # 519-3188 1k Rf DC Stabilized 1000v/ µsec Op Amp adjusted to 300 µV, the change in drift will be 1 µV/°C. The adjustment range with a 10k or 20k pot is approximately ±2.5mV.Iflessadjustmentrangeisneeded,thesensitivity and resolution of the nulling can be improved by using a smaller pot in conjunction with fixed resistors. The ex- ample below has an approximate null range of ±100 µV. APPLICATIONS INFORMATION The device under test should be warmed up for three minutes and shielded from air currents. |
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