©2003 Silicon Storage Technology, Inc.

S71149-05-000

11/03

1

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MPF is a trademark of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Data Sheet

512 Kbit (x8) Multi-Purpose Flash

SST39SF512

FEATURES:

•

Organized as 64K x8

•

Single 4.5-5.5V Read and Write Operations

•

Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

•

Low Power Consumption

(typical values at 14 MHz)

– Active Current: 10 mA (typical)

– Standby Current: 10 µA (typical)

•

Sector-Erase Capability

– Uniform 4 KByte sectors

•

Fast Read Access Time:

– 70 ns

•

Latched Address and Data

•

Fast Erase and Byte-Program

– Sector-Erase Time: 7 ms (typical)

– Chip-Erase Time: 15 ms (typical)

– Byte-Program Time: 20 µs (typical)

– Chip Rewrite Time: 2 seconds (typical)

•

Automatic Write Timing

•

End-of-Write Detection

– Toggle Bit

– Data# Polling

•

TTL I/O Compatibility

•

JEDEC Standard

– Flash EEPROM Pinouts and command sets

•

Packages Available

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

– 32-pin PDIP

PRODUCT DESCRIPTION

The SST39SF512 are CMOS Multi-Purpose Flash (MPF)

manufactured with SST’s proprietary, high performance

CMOS SuperFlash technology. The split-gate cell design

and thick-oxide tunneling injector attain better reliability and

manufacturability compared with alternate approaches.

The SST39SF512 devices write (Program or Erase) with a

4.5-5.5V power supply. The SST39SF512 device conforms

to JEDEC standard pinouts for x8 memories.

Featuring

high

performance

Byte-Program,

the

SST39SF512 devices provide a maximum Byte-Program

time of 30 µsec. These devices use Toggle Bit or Data#

Polling to indicate the completion of Program operation. To

protect against inadvertent write, they have on-chip hard-

ware and Software Data Protection schemes. Designed,

manufactured, and tested for a wide spectrum of applica-

tions, these devices are offered with a guaranteed typical

endurance of 100,000 cycles. Data retention is rated at

greater than 100 years.

The SST39SF512 devices are suited for applications that

require convenient and economical updating of program,

configuration, or data memory. For all system applications,

they significantly improve performance and reliability, while

lowering power consumption. They inherently use less

energy during erase and program than alternative flash

technologies. The total energy consumed is a function of

the applied voltage, current, and time of application. Since

for any given voltage range, the SuperFlash technology

uses less current to program and has a shorter erase time,

the total energy consumed during any Erase or Program

operation is less than alternative flash technologies. These

devices also improve flexibility while lowering the cost for

program, data, and configuration storage applications.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet high density, surface mount requirements, the

SST39SF512 are offered in 32-lead PLCC, 32-lead TSOP,

and a 600 mil, 32-pin PDIP packages. See Figures 1, 2,

and 3 for pin assignments.

SST39SF5125.0V 512Kb (x8) MPF memory