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SST39LF400A Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST39LF400A Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc |
1 / 31 page ©2007 Silicon Storage Technology, Inc. S71117-09-000 2/07 1 The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon Storage Technology, Inc. These specifications are subject to change without notice. Data Sheet FEATURES: • Organized as 128K x16 / 256K x16 / 512K x16 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF200A/400A/800A – 2.7-3.6V for SST39VF200A/400A/800A • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption (typical values at 14 MHz) – Active Current: 9 mA (typical) – Standby Current: 3 µA (typical) • Sector-Erase Capability – Uniform 2 KWord sectors • Block-Erase Capability – Uniform 32 KWord blocks • Fast Read Access Time – 45 and 55 ns for SST39LF200A – 55 ns for SST39LF400A/800A – 70 ns for SST39VF200A/400A/800A • Latched Address and Data • Fast Erase and Word-Program – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Word-Program Time: 14 µs (typical) – Chip Rewrite Time: 2 seconds (typical) for SST39LF/VF200A 4 seconds (typical) for SST39LF/VF400A 8 seconds (typical) for SST39LF/VF800A • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bit – Data# Polling • CMOS I/O Compatibility • JEDEC Standard – Flash EEPROM Pinouts and command sets • Packages Available – 48-lead TSOP (12mm x 20mm) – 48-ball TFBGA (6mm x 8mm) – 48-ball WFBGA (4mm x 6mm) – 48-bump XFLGA (4mm x 6mm) for 4M and 8M • All non-Pb (lead-free) devices are RoHS compliant PRODUCT DESCRIPTION The SST39LF200A/400A/800A and SST39VF200A/400A/ 800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST propri- etary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF200A/400A/800A write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF200A/400A/800A write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories. Featuring high-performance Word-Program, the SST39LF200A/400A/800A and SST39VF200A/400A/ 800A devices provide a typical Word-Program time of 14 µsec. The devices use Toggle Bit or Data# Polling to detect the completion of the Program or Erase operation. To pro- tect against inadvertent write, they have on-chip hardware and software data protection schemes. Designed, manu- factured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endur- ance of 100,000 cycles. Data retention is rated at greater than 100 years. The SST39LF200A/400A/800A and SST39VF200A/400A/ 800A devices are suited for applications that require con- venient and economical updating of program, configura- tion, or data memory. For all system applications, they significantly improve performance and reliability, while low- ering power consumption. They inherently use less energy during Erase and Program than alternative flash technolo- gies. When programming a flash device, the total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed dur- ing any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configura- tion storage applications. The SuperFlash technology provides fixed Erase and Pro- gram times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles. 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A SST39LF/VF200A / 400A / 800A3.0 & 2.7V 2Mb / 4Mb / 8Mb (x16) MPF memories |
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