TK15H50C datasheet(4/6 Pages) TOSHIBA

Part #	TK15H50C

Description	Field Effect Transistor Silicon N-Channel MOS Type (?-MOS VI)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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4 / 6 page

TK15H50C

2006-11-06

4

ID = 15 A

8

4

VGS = 0, −1 V

1

3

10

5

Ciss

Coss

Crss

Common source

VGS = 0 V

f

= 1 MHz

Tc

= 25°C

Drain

−source voltage VDS (V)

IDR − VDS

Drain

−source voltage VDS (V)

Capacitance – VDS

Case temperature Tc (°C)

Vth − Tc

Common source

VGS = 10 V

Pulse test

Common source

VDS = 10 V

ID = 1 mA

Pulse test

Common source

Tc

= 25°C

Pulse test

RDS (ON) – Tc

Case temperature Tc (°C)

0

1.0

0.2

0.6

0.4

0.8

−80

−40

160

0

80

120

40

0.1

100

10

1

−0.2

0

−1.2

−0.4

−0.8

−1.0

−0.6

10

10000

100

1000

0.1

1

100

10

0

5

1

3

2

4

−40

−80

160

0

80

120

40

Dynamic input/output characteristics

VDS

Total gate charge Qg (nC)

Common source

ID = 15 A

Tc

= 25°C

Pulse test

200

VDS = 100 V

500

400

0

300

200

100

0

60

80

100

40

20

8

4

16

20

0

12

VGS

400

200

VDS = 100 V

PD − Tc

200

50

100

150

0

80

40

160

120

200

Case temperature Tc (°C)

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TK15H50C Datasheet(PDF) 4 Page - Toshiba Semiconductor

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