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TIM4450-35SL Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part No. TIM4450-35SL
Description  MICROWAVE POWER GaAs FET
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TIM4450-35SL Datasheet(HTML) 1 Page - Toshiba Semiconductor

   
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MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM4450-35SL
TECHNICAL DATA
FEATURES
LOW INTERMODULATION DISTORTION
HIGH GAIN
IM3=-45 dBc at Po= 35.0dBm,
G1dB=9.5dB at 4.4GHz to 5.0GHz
Single Carrier Level
BROAD BAND INTERNALLY MATCHED FET
HIGH POWER
HERMETICALLY SEALED PACKAGE
P1dB=45.5dBm at 4.4GHz to 5.0GHz
RF PERFORMANCE SPECIFICATIONS
( Ta= 25
°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT
MIN.
TYP. MAX.
Output Power at 1dB Gain
Compression Point
P1dB
dBm
45.0
45.5
Power Gain at 1dB Gain
Compression Point
G1dB
dB
8.5
9.5
Drain Current
IDS1
A
8.0
9.0
Gain Flatness
ΔG
dB
±0.8
Power Added Efficiency
ηadd
VDS
=10V
f = 4.4 to 5.0GHz
%
39
3rd Order Intermodulation
Distortion
IM3
dBc
-42
-45
Drain Current
IDS2
Two-Tone Test
Po=35.0dBm
(Single Carrier Level)
A
8.0
9.0
Channel Temperature Rise
ΔTch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
100
Recommended Gate Resistance(Rg): 28
Ω (Max.)
ELECTRICAL CHARACTERISTICS
( Ta= 25
°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT
MIN.
TYP.
MAX.
Transconductance
gm
VDS= 3V
IDS= 10.5A
mS
6500
Pinch-off Voltage
VGSoff
VDS
= 3V
IDS= 140mA
V
-1.0
-2.5
-4.0
Saturated Drain Current
IDSS
VDS
= 3V
VGS= 0V
A
20
Gate-Source Breakdown
Voltage
VGSO
IGS= -420
μA
V
-5
Thermal Resistance
Rth(c-c)
Channel to Case
°C/W
1.0
1.3
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jan. 2007


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