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US1B Datasheet(PDF) 1 Page - Won-Top Electronics |
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US1B Datasheet(HTML) 1 Page - Won-Top Electronics |
1 / 4 page US1A – US1K 1 of 4 © 2006 Won-Top Electronics Pb US1A – US1K 1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE Features ! Glass Passivated Die Construction ! Ideally Suited for Automatic Assembly B ! Low Forward Voltage Drop, High Efficiency ! Surge Overload Rating to 30A Peak D ! Low Power Loss A ! Ultra-Fast Recovery Time F ! Plastic Case Material has UL Flammability Classification Rating 94V-O C H G E Mechanical Data ! Case: SMA/DO-214AC, Molded Plastic ! Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Weight: 0.064 grams (approx.) ! Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Characteristic Symbol US1A US1B US1D US1G US1J US1K Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 V RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 V Average Rectified Output Current @TL = 100°C IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A Forward Voltage @IF = 1.0A VFM 1.0 1.4 1.7 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 10 500 µA Reverse Recovery Time (Note 1) trr 50 75 100 nS Typical Junction Capacitance (Note 2) Cj 15 pF Typical Thermal Resistance (Note 3) RJL 30 °C/W Operating and Storage Temperature Range Tj, TSTG -50 to +150 °C Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm2 land area. WTE POWER SEMICONDUCTORS SMA/DO-214AC Dim Min Max A 2.50 2.90 B 4.00 4.60 C 1.20 1.60 D 0.152 0.305 E 4.80 5.28 F 2.00 2.44 G 0.051 0.203 H 0.76 1.52 All Dimensions in mm |
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