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SL1ICS3101U Datasheet(PDF) 9 Page - NXP Semiconductors |
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SL1ICS3101U Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 22 page Product Specification SL1 ICS31 01 Rev. 1.2 July 2000 Page 9 of 22 Public 6 Mechanical Die Specifications Designation: VCOL1V0 visible on each die location see attached die plan Bond pad location: see attached die plan Bond pad size: LA, LB 130 µm x 150 µm Test pad size: TEST, VSS 90 µm x 90 µm (the test pads are electrically neutral at sawn wafers) Bond pad metallisation material: AlSiCu Metallisation thickness: 1.4 µm Die dimensions (incl. 80 µm scribe line): 1460 µm x 1490 µm Die dimensions (excl. scribe line): 1380 µm x 1410 µm Tolerances for sawn dies: ± 25 µm Pin identification: see attached die plan Passivation attributes: The passivation is a protection of active areas against dust (particles) and humidity and general contamination (whole surface of the chip except for the bond pads). Top side passivation material: Oxynitride Passivation thickness: 1.6 µm Due to the glass-like physical properties careful handling and processing is required. |
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