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ES1 Datasheet(PDF) 3 Page - NXP Semiconductors |
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ES1 Datasheet(HTML) 3 Page - NXP Semiconductors |
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2000 Feb 14 3 Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers ES1 series ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. THERMAL CHARACTERISTICS Notes 1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm. 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm. For more information please refer to the ‘General Part of associated Handbook’. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage IF = 1 A; see Fig.4 − 1.1 V IR reverse current VR =VRRMmax; see Fig.5 − 5 µA VR =VRRMmax; Tj = 165 °C; see Fig.5 − 100 µA trr reverse recovery time when switched from IF = 0.5 A to IR =1A; measured at IR = 0.25 A; see Fig.9 − 25 ns Cd diode capacitance VR = 4 V; f = 1 MHz; see Fig.6 19 − pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point; see Fig.7 27 K/W Rth j-a thermal resistance from junction to ambient note 1 100 K/W note 2 150 K/W |
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