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SI9956DY Datasheet(PDF) 5 Page - NXP Semiconductors |
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SI9956DY Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 13 page  Philips Semiconductors Si9956DY N-channel enhancement mode field-effect transistor Product data Rev. 01 — 16 July 2001 5 of 13 9397 750 08414 © Philips Electronics N.V. 2001. All rights reserved. 8. Characteristics Table 5: Characteristics Tj =25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics VGS(th) gate-source threshold voltage ID = 250 µA; VDS =VGS 1 −− V IDSS drain-source leakage current VDS =16V; VGS =0V Tj =25 °C −− 2 µA Tj =55 °C −− 25 µA IGSS gate-source leakage current VGS = ±20 V; VDS =0V −− 100 nA RDSon drain-source on-state resistance VGS = 10 V; ID = 2.2 A; Figure 7 and 8 − 55 100 m Ω VGS = 4.5 V; ID =1A; Figure 7 and 8 − 70 200 m Ω Dynamic characteristics gfs forward transconductance VDS =15V; ID = 3.5 A − 5.7 − S Qg(tot) total gate charge ID = 1.8 A; VDS =10V; VGS =10V; Figure 13 − 830 nC Qgs gate-source charge − 0.8 − nC Qgd gate-drain (Miller) charge − 1.7 − nC td(on) turn-on delay time VDD =10V; RD =10 Ω; VGS =10V; RG =6 Ω− 620 ns tr turn-on rise time − 820 ns td(off) turn-off delay time − 14 90 ns tf turn-off fall time − 850 ns Source-drain (reverse) diode VSD source-drain (diode forward) voltage IS = 2.3A; VGS =0V; Figure 12 − 0.75 1.2 V trr reverse recovery time IS = 1.7 A; dIS/dt = −100 A/µs; VGS =0V − 50 100 ns |
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