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SS2P2L Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SS2P2L
Description  Low VF High Current Density Surface Mount Schottky Barrier Rectifiers
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SS2P2L Datasheet(HTML) 1 Page - Vishay Siliconix

   
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Vishay General Semiconductor
SS2P2L & SS2P3L
Document Number: 88916
Revision: 16-May-07
www.vishay.com
1
New Product
Low VF High Current Density Surface Mount
Schottky Barrier Rectifiers
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, free-
wheelling, dc-to-dc converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
DO-220AA (SMP)
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
2 A
VRRM
20 V, 30 V
IFSM
50 A
EAS
11.25 mJ
VF
0.45 V
Tj max.
150 °C
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS2P2L
SS2P3L
UNIT
Device marking code
22L
23L
Maximum repetive peak reverse voltage
VRRM
20
30
V
Maximum average forward rectified current (see Fig. 1)
IF(AV)
2.0
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
50
A
Non-repetitive avalanche energy
at IAS = 1.5 A, L = 10 mH, Tj = 25 °C
EAS
11.25
mJ
Voltage rate of change (rated VR)
dv/dt
10000
V/us
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP
MAX.
UNIT
Maximum instantaneous forward
voltage (1)
at IF = 2 A, Tj = 25 °C
at IF = 2 A, Tj = 125 °C
VF
0.45
0.38
0.50
0.45
V
Maximum reverse current at
rated VR
(1)
Tj = 25 °C
Tj = 125 °C
IR
-
9.0
200
20
µA
mA
Typical junction capacitance
at 4.0 V, 1 MHz
CJ
130
pF


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