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SI9936DY Datasheet(PDF) 5 Page - NXP Semiconductors |
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SI9936DY Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 13 page Philips Semiconductors Si9936DY N-channel enhancement mode field-effect transistor Product data Rev. 01 — 16 July 2001 5 of 13 9397 750 08413 © Philips Electronics N.V. 2001. All rights reserved. 8. Characteristics Table 5: Characteristics Tj =25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics VGS(th) gate-source threshold voltage ID = 250 µA; VDS =VGS 1 −− V IDSS drain-source leakage current VDS =24V; VGS =0V Tj =25 °C −− 2 µA Tj =55 °C −− 20 µA IGSS gate-source leakage current VGS = ±20 V; VDS =0V −− 100 nA RDSon drain-source on-state resistance VGS = 10 V; ID =5A; Figure 7 and 8 − 35 50 m Ω VGS = 4.5 V; ID = 3.9 A; Figure 7 and 8 − 44 80 m Ω Dynamic characteristics gfs forward transconductance VDS =15V; ID =5A − 11 − S Qg(tot) total gate charge ID = 5 A; VDS = 15 V; VGS =10V; Figure 13 − 18.5 35 nC Qgs gate-source charge − 1.9 − nC Qgd gate-drain (Miller) charge − 3 − nC td(on) turn-on delay time VDD =15V; RD =15 Ω; VGS =10V; RG =6 Ω− 11 30 ns tr turn-on rise time − 925 ns td(off) turn-off delay time − 25 50 ns tf turn-off fall time − 10 50 ns Source-drain (reverse) diode VSD source-drain (diode forward) voltage IS = 1.7A; VGS =0V; Figure 12 − 0.72 1.2 V trr reverse recovery time IS = 5 A; dIS/dt = −100 A/µs; VGS =0V − 60 160 ns |
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