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SI2304DS Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. SI2304DS
Description  N-channel enhancement mode field-effect transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

SI2304DS Datasheet(HTML) 3 Page - NXP Semiconductors

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Philips Semiconductors
SI2304DS
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 17 August 2001
3 of 12
9397 750 08526
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
VGS ≥ 10 V
Fig 1.
Normalized total power dissipation as a
function of solder point temperature.
Fig 2.
Normalized continuous drain current as a
function of solder point temperature.
Tsp =25°C; IDM is single pulse
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa17
0
20
40
60
80
100
120
0
50
100
150
200
Tsp (
oC)
Pder
(%)
03aa25
0
20
40
60
80
100
120
0
50
100
150
200
Tsp (
oC)
Ider
(%)
P
der
P
tot
P
tot 25 C
°
()
-----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
tp
tp
T
P
t
T
δ =
102
ID
(A)
10
1
10-1
10-2
VDS (V)
110
102
10-1
RDSon = VDS / ID
tp = 10
µs
1 ms
10 ms
100 ms
D.C.
003aaa120


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