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SI2304DS Datasheet(PDF) 5 Page - NXP Semiconductors

Part No. SI2304DS
Description  N-channel enhancement mode field-effect transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

SI2304DS Datasheet(HTML) 5 Page - NXP Semiconductors

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Philips Semiconductors
SI2304DS
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 17 August 2001
5 of 12
9397 750 08526
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID =10 µA; VGS =0V
Tj =25 °C30
40
V
Tj = −55 °C27
−−
V
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS =VGS; Figure 9
Tj =25 °C
1.5
2
V
Tj = 150 °C
0.5
−−
V
Tj = −55 °C
−−
2.7
V
IDSS
drain-source leakage current
VDS =30V; VGS =0V
Tj =25 °C
0.01
0.5
µA
Tj = 150 °C
−−
10
µA
IGSS
gate-source leakage current
VGS = ±10 V; VDS =0V
10
100
nA
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 500 mA; Figure 7 and 8
Tj =25 °C
−−
117
m
VGS = 4.5 V; ID = 500 mA
Tj =25 °C
−−
190
m
Tj = 150 °C
−−
300
m
Dynamic characteristics
gfs
forward transconductance
VDS =10V; ID = 1 A
1.4
2.5
S
Qg(tot)
total gate charge
VDD =15V; VGS =10V; ID = 0.5 A; Figure 13
4.6
nC
Qgs
gate-source charge
0.6
nC
Qgd
gate-drain (Miller) charge
1.35
1.83
nC
Ciss
input capacitance
VGS =0V; VDS = 10 V; f = 1 MHz; Figure 11
147
195
pF
Coss
output capacitance
65
78
pF
Crss
reverse transfer capacitance
41
56
pF
td(on)
turn-on delay time
VDD =15V; RL =15 Ω; VGS =10V
46ns
tr
rise time
7.5
12
ns
td(off)
turn-off delay time
18
35
ns
tf
fall time
13
19
ns
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 0.83 A; VGS =0V; Figure 12
0.7
1.2
V
trr
reverse recovery time
IS = 1 A; dIS/dt = −100 A/µs; VGS =0V;
VDS =25V
69
ns


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