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SI2302DS Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. SI2302DS
Description  N-channel enhancement mode field-effect transistor
Download  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

SI2302DS Datasheet(HTML) 3 Page - NXP Semiconductors

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Philips Semiconductors
SI2302DS
N-channel enhancement mode field-effect transistor
Product data
Rev. 02 — 20 November 2001
3 of 12
9397 750 09107
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Fig 1.
Normalized total power dissipation as a
function of solder point temperature.
Fig 2.
Normalized continuous drain current as a
function of solder point temperature.
Tsp =25 °C; IDM is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa17
0
40
80
120
0
50
100
150
200
Tsp (
oC)
Pder
(%)
03aa25
0
40
80
120
0
50
100
150
200
Tsp (
oC)
Ider
(%)
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
03ae92
10-2
10-1
1
10
102
10-1
1
10
102
VDS (V)
ID
(A)
DC
100 ms
10 ms
RDSon = VDS / ID
1 ms
tp = 10 µs


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