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SI2302DS Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. SI2302DS
Description  N-channel enhancement mode field-effect transistor
Download  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

SI2302DS Datasheet(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
SI2302DS
N-channel enhancement mode field-effect transistor
Product data
Rev. 02 — 20 November 2001
2 of 12
9397 750 09107
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
20
V
ID
drain current (DC)
Tsp =25 °C; VGS = 4.5 V
2.5
A
Ptot
total power dissipation
Tsp =25 °C
0.83
W
Tj
junction temperature
150
°C
RDSon
drain-source on-state resistance
VGS = 4.5 V; ID = 3.6 A
5685m
VGS = 2.5 V; ID = 3.1 A
77
115
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
20
V
VGS
gate-source voltage (DC)
−±8V
ID
drain current (DC)
Tsp =25 °C; VGS = 4.5 V; Figure 2 and 3
2.5
A
Tsp =70 °C; VGS = 4.5 V; Figure 2
2A
IDM
peak drain current
Tsp =25 °C; pulsed; tp ≤ 10 µs; Figure 3
10
A
Ptot
total power dissipation
Tsp =25 °C; Figure 1
0.83
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−65
+150
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tsp =25 °C
0.7
A


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