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SI2302DS Datasheet(PDF) 6 Page - NXP Semiconductors

Part No. SI2302DS
Description  N-channel enhancement mode field-effect transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

SI2302DS Datasheet(HTML) 6 Page - NXP Semiconductors

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Philips Semiconductors
SI2302DS
N-channel enhancement mode field-effect transistor
Product data
Rev. 02 — 20 November 2001
6 of 12
9397 750 09107
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Tj =25 °CTj =25 °C and 150 °C; VDS > ID × RDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ae93
0
2
4
6
8
10
0
0.5
1
1.5
VDS (V)
ID
(A)
2 V
2.5 V
3 V
4.5 V
VGS = 1.5V
03ae95
0
2
4
6
8
10
0123
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 150 ºC
25 ºC
03ae94
0.05
0.06
0.07
0.08
0.09
0.1
02
46
8
10
ID (A)
RDSon
(
Ω)
Tj = 25 ºC
VGS = 2.5 V
4.5 V
3 V
03ad57
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
Tj (ºC)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=


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