Electronic Components Datasheet Search |
|
IRL3803VLPBF Datasheet(PDF) 2 Page - International Rectifier |
|
IRL3803VLPBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 10 page IRL3803VS/IRL3803VLPbF 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 71A, VGS = 0V trr Reverse Recovery Time ––– 52 78 ns TJ = 25°C, IF = 71A Qrr Reverse Recovery Charge ––– 91 140 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 140 470 A Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting TJ = 25°C, L = 160µH RG = 25Ω, IAS = 71A, VGS=10V (See Figure 12) ISD ≤ 71A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents operation outside rated limits. Notes: This is a calculated value limited to TJ = 175°C . Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Uses IRL3803 data and test conditions. This is applied to D2Pak, when mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 5.5 VGS = 10V, ID = 71A ––– ––– 7.5 VGS = 4.5V, ID = 59A VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 82 ––– ––– S VDS = 25V, ID = 71A ––– ––– 25 µA VDS = 30V, VGS = 0V ––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -16V Qg Total Gate Charge ––– ––– 76 ID = 71A Qgs Gate-to-Source Charge ––– ––– 19 nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 35 VGS = 4.5V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 16 ––– VDD = 15V tr Rise Time ––– 180 ––– ID = 71A td(off) Turn-Off Delay Time ––– 29 ––– RG = 1.3Ω tf Fall Time ––– 37 ––– VGS = 4.5V, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 3720 ––– VGS = 0V Coss Output Capacitance ––– 1480 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 270 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy ––– 1560
400 mJ IAS = 71A, L = 0.16mH S D G Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) Static Drain-to-Source On-Resistance IGSS nH LS Internal Source Inductance ––– 7.5 ––– LD Internal Drain Inductance ––– 4.5 ––– IDSS Drain-to-Source Leakage Current m Ω |
Similar Part No. - IRL3803VLPBF |
|
Similar Description - IRL3803VLPBF |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |