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SB1020DC Datasheet(PDF) 1 Page - Won-Top Electronics

Part No. SB1020DC
Description  10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
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Manufacturer  WTE [Won-Top Electronics]
Direct Link  http://www.wontop.com
Logo WTE - Won-Top Electronics

SB1020DC Datasheet(HTML) 1 Page - Won-Top Electronics

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SB1020DC – SB10100DC
1 of 4
© 2006 Won-Top Electronics
Pb
SB1020DC – SB10100DC
10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
Features
!
Schottky Barrier Chip
C
!
Guard Ring Die Construction for
A
J
Transient Protection
!
Low Forward Voltage Drop
!
Low Power Loss, High Efficiency
B
!
High Surge Current Capability
D
E
!
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
G
Protection Applications
H
                          K
P
P
Mechanical Data
!
Case: D
2PAK/TO-263, Molded Plastic
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
!
Polarity: See Diagram
PIN 1 -
+
!
Weight: 1.7 grams (approx.)
PIN 3 -
Case, PIN 2
!
Mounting Position: Any
!
Marking: Type Number
!
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics @T
A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
SB
1020DC
SB
1030DC
SB
1040DC
SB
1045DC
SB
1050DC
SB
1060DC
SB
1080DC
SB
10100DC
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
30
40
45
50
60
80
100
V
RMS Reverse Voltage
VR(RMS)
14
21
28
32
35
42
56
70
V
Average Rectified Output Current @TC = 100°C
IO
10
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
150
A
Forward Voltage
@IF = 5.0A
VFM
0.55
0.75
0.85
V
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage
@TA = 100°C
IRM
0.5
50
mA
Typical Junction Capacitance (Note 1)
Cj
600
pF
Typical Thermal Resistance (Note 2)
RJC
3.0
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
WTE
POWER SEMICONDUCTORS
D2 PAK/TO-263
Dim
Min
Max
A
9.80
10.40
B
9.60
10.60
C
4.40
4.80
D
8.50
9.10
E
2.80
G
1.00
1.40
H
—0.90
J
1.20
1.40
K
0.30
0.70
P
2.35
2.75
All Dimensions in mm
PIN 1
2
3


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