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SB820DC Datasheet(PDF) 1 Page - Won-Top Electronics

Part No. SB820DC
Description  8.0A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
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Maker  WTE [Won-Top Electronics]
Homepage  http://www.wontop.com
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SB820DC Datasheet(HTML) 1 Page - Won-Top Electronics

   
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SB820DC – SB8100DC
1 of 4
© 2006 Won-Top Electronics
Pb
SB820DC – SB8100DC
8.0A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
Features
!
Schottky Barrier Chip
C
!
Guard Ring Die Construction for
A
J
Transient Protection
!
Low Forward Voltage Drop
!
Low Power Loss, High Efficiency
B
!
High Surge Current Capability
D
E
!
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
G
Protection Applications
H
                          K
P
P
Mechanical Data
!
Case: D
2PAK/TO-263, Molded Plastic
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
!
Polarity: See Diagram
PIN 1 -
+
!
Weight: 1.7 grams (approx.)
PIN 3 -
Case, PIN 2
!
Mounting Position: Any
!
Marking: Type Number
!
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics @T
A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol
SB
820DC
SB
830DC
SB
840DC
SB
845DC
SB
850DC
SB
860DC
SB
880DC
SB
8100DC
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
30
40
45
50
60
80
100
V
RMS Reverse Voltage
VR(RMS)
14
21
28
32
35
42
56
70
V
Average Rectified Output Current @TC = 100°C
IO
8.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
150
A
Forward Voltage
@IF = 4.0A
VFM
0.55
0.75
0.85
V
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage
@TA = 100°C
IRM
0.5
50
mA
Typical Junction Capacitance (Note 1)
Cj
400
pF
Typical Thermal Resistance (Note 2)
RJC
3.0
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
WTE
POWER SEMICONDUCTORS
D2 PAK/TO-263
Dim
Min
Max
A
9.80
10.40
B
9.60
10.60
C
4.40
4.80
D
8.50
9.10
E
2.80
G
1.00
1.40
H
—0.90
J
1.20
1.40
K
0.30
0.70
P
2.35
2.75
All Dimensions in mm
PIN 1
2
3


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