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SB660FCT Datasheet(PDF) 1 Page - Won-Top Electronics |
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SB660FCT Datasheet(HTML) 1 Page - Won-Top Electronics |
1 / 4 page SB620FCT – SB660FCT 1 of 4 © 2006 Won-Top Electronics Pb SB620FCT – SB660FCT 6.0A DUAL SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip B ! Guard Ring for Transient Protection ! Low Forward Voltage Drop C ! Low Reverse Leakage Current ! High Surge Current Capability G A ! Plastic Material has UL Flammability Classification 94V-O PIN1 2 3 D Mechanical Data F E ! Case: ITO-220, Full Molded Plastic ! Terminals: Plated Leads Solderable per P MIL-STD-202, Method 208 ! Polarity: See Diagram I ! Weight: 2.24 grams (approx.) ! Mounting Position: Any H L ! Mounting Torque: 11.5 cm-kg (10 in-lbs) Max. ! Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 PIN 1 - + J PIN 3 - PIN 2 K Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol SB620FCT SB630FCT SB640FCT SB650FCT SB660FCT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 50 60 V RMS Reverse Voltage VR(RMS) 14 21 28 35 42 V Average Rectified Output Current @TC = 75°C IO 6.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 75 A Forward Voltage @IF = 3.0A VFM 0.55 0.70 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 0.2 15 mA Typical Junction Capacitance (Note 1) Cj 400 pF Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. WTE POWER SEMICONDUCTORS ITO-220 Dim Min Max A 14.60 15.40 B 9.70 10.30 C 2.55 2.85 D 3.56 4.16 E 13.00 13.80 F 0.30 0.90 G 3.00 Ø 3.50 Ø H 6.30 6.90 I 4.20 4.80 J 2.50 2.90 K 0.36 0.80 L 2.90 3.30 P 2.29 2.79 All Dimensions in mm |
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