IRHNJ57133SE datasheet(8/8 Pages) IRF

Part #	IRHNJ57133SE

Description	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

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Manufacturer	IRF [International Rectifier]

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IRHNJ57133SE, JANSR2N7485U3

Pre-Irradiation

8

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Ã Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Ä Total Dose Irradiation with VGS Bias.

12 volt VGS applied and VDS = 0 during

irradiation per MIL-STD-750, method 1019, condition A.

Å Total Dose Irradiation with VDS Bias.

104 volt VDS applied and VGS = 0 during

irradiation per MlL-STD-750, method 1019, condition A.

À Repetitive Rating; Pulse width limited by

maximum junction temperature.

Á VDD = 50V, starting TJ = 25°C, L= 0.3 mH

Peak IL = 20A, VGS = 12V

Â ISD ≤ 20A, di/dt ≤ 365A/µs,

VDD ≤ 130V, TJ ≤ 150°C

Footnotes:

Case Outline and Dimensions — SMD-0.5

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 05/2004

1 = DRAIN

2 = GATE

3 = SOURCE

PAD ASSIGNMENTS

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