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IRHNJ63C30 Datasheet(PDF) 1 Page - International Rectifier |
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IRHNJ63C30 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Absolute Maximum Ratings Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 3.4 ID @ VGS = 12V, TC = 100°C Continuous Drain Current 2.2 IDM Pulsed Drain Current À 13.6 PD @ TC = 25°C Max. Power Dissipation 75 W Linear Derating Factor 0.6 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy Á 76 mJ IAR Avalanche Current À 3.4 A EAR Repetitive Avalanche Energy À 7.5 mJ dv/dt Peak Diode Recovery dv/dt  9.2 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Pckg. Mounting Surface Temp. 300 (for 5s) Weight 1.0 (Typical) g oC A 08/14/06 www.irf.com 1 TECHNOLOGY For footnotes refer to the last page Pre-Irradiation RADIATION HARDENED IRHNJ67C30 POWER MOSFET 600V, N-CHANNEL SURFACE-MOUNT (SMD-0.5) Features: n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Ceramic Package n Light Weight SMD-0.5 International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters. Product Summary Part Number Radiation Level RDS(on) ID IRHNJ67C30 100K Rads (Si) 2.9 Ω 3.4A IRHNJ63C30 300K Rads (Si) 2.9 Ω 3.4A PD-97198 |
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