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IRFR18N15DPBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRFR18N15DPBF
Description  SMPS MOSFET
Download  10 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRFR18N15DPBF Datasheet(HTML) 2 Page - International Rectifier

 
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IRFR/U18N15DPbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
4.2
–––
–––
S
VDS = 50V, ID = 11A
Qg
Total Gate Charge
–––
28
43
ID = 11A
Qgs
Gate-to-Source Charge
–––
7.6
11
nC
VDS = 120V
Qgd
Gate-to-Drain ("Miller") Charge
–––
14
21
VGS = 10V,
„
td(on)
Turn-On Delay Time
–––
8.8
–––
VDD = 75V
tr
Rise Time
–––
25
–––
ID = 11A
td(off)
Turn-Off Delay Time
–––
15
–––
RG = 6.8Ω
tf
Fall Time
–––
9.8
–––
VGS = 10V
„
Ciss
Input Capacitance
–––
900
–––
VGS = 0V
Coss
Output Capacitance
–––
190
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
49
–––
pF
ƒ = 1.0MHz
Coss
Output Capacitance
–––
1160 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
88
–––
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
95
–––
VGS = 0V, VDS = 0V to 120V
…
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
200
mJ
IAR
Avalanche Current

–––
11
A
EAR
Repetitive Avalanche Energy

–––
11
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 11A, VGS = 0V
„
trr
Reverse Recovery Time
–––
130
190
ns
TJ = 25°C, IF = 11A
Qrr
Reverse RecoveryCharge
–––
660
980
nC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
18
72
A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
150
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.17
–––
V/°C
Reference to 25°C, ID = 1mA
†
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.125
VGS = 10V, ID = 11A
„
VGS(th)
Gate Threshold Voltage
3.0
–––
5.5
V
VDS = VGS, ID = 250µA
–––
–––
25
µA
VDS = 150V, VGS = 0V
–––
–––
250
VDS = 120V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 30V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -30V
IGSS
IDSS
Drain-to-Source Leakage Current
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.4
RθJA
Junction-to-Ambient (PCB mount)*
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
Thermal Resistance


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