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IRFI4321PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFI4321PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFI4321PbF 2 www.irf.com S D G Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.85mH RG = 25Ω, IAS = 20A, VGS =10V. Part not recommended for use above this value. Pulse width ≤ 400µs; duty cycle ≤ 2%. Rθ is measured at TJ approximately 90°C Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 190 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 12.2 16 m Ω VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 1.0 mA IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 RG(int) Internal Gate Resistance ––– 0.8 ––– Ω Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 50 ––– ––– S Qg Total Gate Charge ––– 73 110 nC Qgs Gate-to-Source Charge ––– 24 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 20 ––– td(on) Turn-On Delay Time ––– 18 ––– ns tr Rise Time ––– 29 ––– td(off) Turn-Off Delay Time ––– 27 ––– tf Fall Time ––– 20 ––– Ciss Input Capacitance ––– 4440 ––– pF Coss Output Capacitance ––– 390 ––– Crss Reverse Transfer Capacitance ––– 84 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 34 A (Body Diode) ISM Pulsed Source Current ––– ––– 140 A (Body Diode) c VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 86 130 ns ID = 20A Qrr Reverse Recovery Charge ––– 310 470 nC VR = 128V, IRRM Reverse Recovery Current ––– 6.7 ––– A di/dt = 100A/µs e ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VGS = 10V e VDD = 75V TJ = 25°C, IS = 20A, VGS = 0V e integral reverse p-n junction diode. showing the ID = 20A RG = 2.5Ω Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA e VGS = 10V, ID = 20A e VDS = VGS, ID = 250µA VDS = 150V, VGS = 0V VDS = 150V, VGS = 0V, TJ = 125°C MOSFET symbol VDS = 75V Conditions VGS = 10V e VGS = 0V VDS = 50V ƒ = 1.0MHz Conditions VDS = 50V, ID = 20A ID = 20A VGS = 20V VGS = -20V |
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