JANTX2N6798U datasheet(4/7 Pages) IRF

Part #	JANTX2N6798U

Description	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

1

10

100

0

400

800

1200

1600

V

, Drain-to-Source Voltage (V)

DS

V

C

=

0V,

C

f = 1MHz

+ C

C

SHORTED

GS

iss

gs

gd ,

ds

rss

gd

oss

ds

gd

Ciss

Coss

Crss

0

10

20

30

40

50

0

4

8

12

16

20

Q , Total Gate Charge (nC)

G

FOR TEST CIRCUIT

SEE FIGURE

I =

D

13

5.5A

V

= 40V

DS

V

= 100V

DS

V

= 160V

DS

0.1

1

10

100

0.4

0.6

0.8

1.0

1.2

1.4

1.6

V

,Source-to-Drain Voltage (V)

SD

V

= 0 V

GS

T = 25 C

J

°

T = 150 C

J

°

0.1

1

10

100

1

10

100

1000

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

T

= 150 C

= 25 C

°

J

C

V

, Drain-to-Source Voltage (V)

DS

10us

100us

1ms

10ms

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