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SFT5096G Datasheet(PDF) 2 Page - Solid States Devices, Inc |
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SFT5096G Datasheet(HTML) 2 Page - Solid States Devices, Inc |
2 / 3 page Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFT5094-4, SFT5094/5, SFT5094G And SFT5096-4, SFT5096/5, SFT5096G Electrical Characteristics 4/ Symbol Min Max Units (IC = 50 mA) BVCEO SFT5094 400 SFT5096 450 –– Collector – Emitter Breakdown Voltage * (IC = 100 µA, RBE = 1k Ω) BVCER 450 500 –– Volts Collector – Base Breakdown Voltage * (IC = 100 µA) BVCBO 450 500 –– Volts Emitter – Base Breakdown Voltage (IE = 50 µA) BVEBO 6 –– Volts Collector Cutoff Current (VCB = Rated, TA = 25°C) (VCB = Rated, TA = 100°C) ICBO1 ICBO2 –– –– 1.0 50 µA Emitter Cutoff Current (VEB = 6 V) IEBO –– 1.0 µA DC Current Gain * (IC = 1 mA, VCE = 10 V) (IC = 25 mA, VCE = 10 V) (IC = 100 mA, VCE = 10 V) HFE 20 40 20 250 300 250 Collector-Emitter Saturation Voltage * (IC = 25 mA, IB = 2.5 mA) VCE (SAT) –– 500 mV Base-Emitter Saturation Voltage (IC = 25 mA, IB = 2.5 mA) VBE (SAT) –– 1.0 Volts Current Gain Bandwidth Product * (IC = 10 mA, VCE = 10 V, f = 10 MHz) fT 25 –– MHz Output Capacitance VCB = 20 V, IE = 0 A, f = 1.0MHz Cob –– 10 pF Turn on Delay Time Rise Time Storage Time Fall Time VCC= 100 V IC= 100 mA IB1 = IB2 = 10 mA Td Tr Ts tf –– –– –– –– 500 1200 2.0 500 ns ns µs ns Notes: * Pulse Test: Pulse Width = 300 µs. Duty Cycle = 2%. 1/ For Ordering Information, Price, Operating Curves, and Availability Contact Factory. 2/ Screened to MIL-PRF-19500. 3/ For Package Outlines, See Figure 1. 4/ Unless Otherwise Specified, Maximum Ratings/Electrical Characteristics at 25°C. PIN ASSIGNMENT (Standard) Package Collector Emitter Base 4 Pin CLCC (-4) Pin 1 Pin 2 Pin 3 TO-5 (/5) Pin 3 Pin 1 Pin 2 CERPACK (G) CASE Pin 1 Pin 2 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0081B DOC |
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