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IRF3711ZCS Datasheet(PDF) 1 Page - International Rectifier |
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IRF3711ZCS Datasheet(HTML) 1 Page - International Rectifier |
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1 / 11 page  www.irf.com 1 10/07/03 HEXFET® Power MOSFET Notes through
are on page 11 Applications Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 94792 VDSS RDS(on) max Qg 20V 6.0m : 16nC IRF3711ZCS IRF3711ZCL D2Pak IRF3711ZCS TO-262 IRF3711ZCL Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation W PD @TC = 100°C Maximum Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.89 °C/W RθJA Junction-to-Ambient (PCB Mount) f ––– 40 300 (1.6mm from case) -55 to + 175 79 0.53 40 Max. 92 g 65 g 380 ± 20 20 |
Similar Part No. - IRF3711ZCS |
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Similar Description - IRF3711ZCS |
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