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SPT5502 Datasheet(PDF) 2 Page - Solid States Devices, Inc

Part No. SPT5502
Description  1 AMP HIGH VOLTAGE / HIGH SPEED NPN TRANSISTOR
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Maker  SSDI [Solid States Devices, Inc]
Homepage  http://www.ssdi-power.com
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SPT5502 Datasheet(HTML) 2 Page - Solid States Devices, Inc

   
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SOLID STATE DEVICES, INC.
SPT5502
SPT5503
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
NOTES:
1/ Unless Otherwise Specified TA = 25
oC
*
Pulse Test: Pulse Width = 300
µs, Duty Cycle = 2%
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
VDC
700
800
-
-
BVCER
Collector-Emitter Breakdown Voltage
(IC = 200µA, IB = 0A, RBE = 1kΩ)
µµµµµADC
-50
IEBO
MIN
MAX
ELECTRICAL CHARACTERISTICS 1/
SYMBOL
UNITS
DC Current Gain*
(VCE = 5VDC)
15
10
5
0.5
1.0
Collector-Emitter Saturation
Voltage *
VCE(SAT)
VDC
HFE
Base-Emitter Saturation
Voltage *
1.0
1.2
VDC
VBE(SAT)
-
Current Gain Bandwidth Product
(IC = 100mADC , VCE = 10VDC, f = 1MHz)
8
fT
VCC = 125VDC , IC = 1ADC,
IB1 = 200mADC
Rise Time
tr
700
nsec
IC = 50mADC
IC = 0.5ADC
IC = 1ADC
-
-
-
-
90
50
-
Emitter Cutoff Current
(VBE = 10VDC, IC = 0ADC)
Delay Time
td
100
nsec
-
IC = 0.5ADC, IB = 0.1ADC
IC = 1ADC, IB = 0.25ADC
IC = 0.5ADC, IB = 0.1ADC
IC = 1ADC, IB = 0.25ADC
Output Capacitance
(VCB = 20VDC , IE = 0, f = 1MHz)
-35
Cob
pF
Second Breakdown Collector Current
With Base Forward Biased
(VCE = 200V, t = 1sec (Non-Repetitive))
50
-
IS/B
mADC
VCC = 125VDC , IC = 1ADC,
IB1 = IB2 = 200mADC
Fall Time
tf
700
nsec
-
Storage Time
ts
3
µµµµµsec
-
SPT5502
SPT5503
µµµµµADC
-
-
10
10
ICEO
Collector Cutoff Current
(IB = 0ADC)
µµµµµADC
mADC
-
-
50
1.0
ICEX
Collector Cutoff Current
(VCE = Rated VCE, VEB(off) = 1.5VDC)
VCE = 300VDC
VCE = 400VDC
TC = 25
oC
TC = 100
oC
µµµµµADC
-
100
ICBO
Collector Cutoff Current
(VCB = Rated VCB, IE = 0ADC)
MHz


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