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GP1A73AJ000F Datasheet(PDF) 6 Page - Sharp Corporation |
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GP1A73AJ000F Datasheet(HTML) 6 Page - Sharp Corporation |
6 / 10 page 6 Sheet No.: D3-A04601EN GP1A73AJ000F ■ Design Considerations ● Design guide 1) Prevention of detection error To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light. 2) In order to stabilize power supply line, connect aby-pass capacitor of more than 0.01μF between VCC and GND near the device. 3) When the sensor is connected with long wire, noise might be on the signal from the sensor while it is going through the wire. To avoid this problem, please evaluate the sensor under actual usage condition to make sure that the system works fine. 4) Position of opaque board Opaque board shall be installed at place 4mm or more from the top of elements. (Example) 4mm or more This product is not designed against irradiation and incorporates non-coherent IRED. ● Parts This product is assembled using the below parts. • Photodetector (qty. : 1) [Using a silicon photodiode as light detecting portion, and a bipolar IC as signal processing circuit] Category Material Maximum Sensitivity wavelength (nm) Sensitivity wavelength (nm) Response time (μs) Photo diode Silicon (Si) 900 400 to 1 200 10 • Photo emitter (qty. : 1) Category Material Maximum light emitting wavelength (nm) I/O Frequency (MHz) Infrared emitting diode (non-coherent) Gallium arsenide (GaAs) 940 0.3 • Material Case Lead frame Connector terminal finish Black polycarbonate resin (UL94V-2) 42Alloys (There is no plating) Sn plating (PN : 292133-3) SnCu plating (PN : GH4A003P000ZA) • Others Laser generator is not used. |
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