C50A – C50K

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© 2006 Won-Top Electronics

Pb

C50A – C50K

50A AUTOMOTIVE CELL DIODE

Features

Diffused Junction

Low Leakage

D

Low Cost

Anode

+

High Surge Current Capability

C

Die Size 220 mil HEX

E

Mechanical Data

B

Case: Cell Diode Passivated with Silicon Rubber

Terminal: Copper Disc with Ag Plated

Polarity: Indicated by Large Disc On Cathode

Side, Add “R” Suffix to Indicate Reverse Polarity,

i.e. C50AR

Mounting Position: Any

A

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 2

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

C50A

C50B

C50D

C50G

C50J

C50K

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

50

100

200

400

600

800

V

RMS Reverse Voltage

35

70

140

280

420

560

V

Average Rectified Output Current

50

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

500

A

Forward Voltage

1.08

V

Peak Reverse Current

At Rated DC Blocking Voltage

3.0

µA

Typical Thermal Resistance Junction to Ambient

1.0

°C/W

Operating and Storage Temperature Range

-40 to +150

°C

WTE

POWER SEMICONDUCTORS

C50

Dim

Min

Max

A

—

7.40

B

—

6.55

C

0.75

—

D

1.0

—

E

—

2.2

All Dimensions in mm