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GP2S60 Datasheet(PDF) 3 Page - Sharp Electrionic Components

Part No. GP2S60
Description  SMT, Detecting Distance : 0.5mm Phototransistor Output, Compact Refl ective Photointerrupter
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Manufacturer  SHARP [Sharp Electrionic Components]
Direct Link  http://sharp-world.com/
Logo SHARP - Sharp Electrionic Components

GP2S60 Datasheet(HTML) 3 Page - Sharp Electrionic Components

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Sheet No.: D3-A02101EN
GP2S60
■ Absolute Maximum Ratings
■ Electro-optical Characteristics
(Ta=25˚C)
Parameter
Symbol
Rating
Unit
Input
Forward current
IF
50
mA
Reverse voltage
VR
6V
Power dissipation
PD
75
mW
Output
Collector-emitter voltage
VCEO
35
V
Emitter-collector voltage
VECO
6V
Collector current
IC
20
mA
Collector power dissipation
PC
75
mW
Total power dissipation
Ptot
100
mW
Operating temperature
Topr
−25 to +85
˚C
Storage temperature
Tstg
−40 to +100
˚C
∗1Soldering temperature
Tsol
260
˚C
1 For 5s or less
(Ta=25˚C)
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Input
Forward voltage
VF
IF=20mA
1.2
1.4
V
Reverse current
IR
VR=6V
−−
10
μA
Output
Collector dark current
ICEO
VCE=20V
1
100
nA
Transfer
charac-
teristics
∗2 Collector Current
IC
IF=4mA, VCE=2V
40
85
130
μA
∗3 Leak current
ILEAK
IF=4mA, VCE=2V
−−
500
nA
Response time
Rise time
tr
VCE=2V, IC=100μA,
RL=1kΩ, d=1mm
20
100
μs
Fall time
tf
20
100
2 The condition and arrangement of the reflective object are shown below.
The rank splitting of collector current (IC) shall be executed according to the table below.
Rank
Collector current, IC [μA]
(IF=4mA, VCE=2V)
A
40 to 80
B
65 to 130
3 Without reflective object.
● Test Condition and Arrangement for Collector Current
d=1mm
glass plate
Aluminum evaporation


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